PRMD12Z Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1412-6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4759 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.05 грн |
| 19+ | 15.19 грн |
| 100+ | 7.42 грн |
| 500+ | 5.8 грн |
| 1000+ | 4.03 грн |
| 2000+ | 3.49 грн |
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Технічний опис PRMD12Z Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 480mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Frequency - Transition: 230MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: DFN1412-6, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PRMD12Z
| Фото | Назва | Виробник | Інформація |
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PRMD12Z | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 480mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Frequency - Transition: 230MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: DFN1412-6 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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PRMD12Z | Виробник : Nexperia |
Bipolar Transistors - BJT PRMD12/SOT1268/DFN1412-6 |
товар відсутній |