Продукція > NEXPERIA USA INC. > PRMH9Z
PRMH9Z

PRMH9Z Nexperia USA Inc.

PRMH9.pdf Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V DFN1412-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1412-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 208000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9072+2 грн
Мінімальне замовлення: 9072
Відгуки про товар
Написати відгук

Технічний опис PRMH9Z Nexperia USA Inc.

Description: TRANS PREBIAS 2NPN 50V DFN1412-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 480mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V, Frequency - Transition: 230MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: DFN1412-6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Інші пропозиції PRMH9Z

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
PRMH9Z PRMH9Z Виробник : Nexperia USA Inc. PRMH9.pdf Description: TRANS PREBIAS 2NPN 50V DFN1412-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1412-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PRMH9Z PRMH9Z Виробник : Nexperia USA Inc. PRMH9.pdf Description: TRANS PREBIAS 2NPN 50V DFN1412-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1412-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PRMH9Z PRMH9Z Виробник : Nexperia PRMH9-1600254.pdf Bipolar Transistors - BJT PRMH9/SOT1268 DFN1412-6
товар відсутній