PSMN013-100PS,127 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 100V 68A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
на замовлення 5992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.6 грн |
| 10+ | 127.47 грн |
| 100+ | 101.46 грн |
| 500+ | 80.57 грн |
| 1000+ | 68.36 грн |
| 2000+ | 64.94 грн |
| 5000+ | 61.47 грн |
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Технічний опис PSMN013-100PS,127 Nexperia USA Inc.
Description: MOSFET N-CH 100V 68A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V.
Інші пропозиції PSMN013-100PS,127
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Доступність |
Ціна без ПДВ |
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PSMN013-100PS,127 | Виробник : Nexperia |
Trans MOSFET N-CH 100V 68A 3-Pin(3+Tab) TO-220AB Rail |
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PSMN013-100PS,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 68A; Idm: 272A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 68A Pulsed drain current: 272A Power dissipation: 170W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: THT Gate charge: 59nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN013-100PS,127 | Виробник : Nexperia |
MOSFET PSMN013-100PS/SOT78/SIL3P |
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PSMN013-100PS,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 68A; Idm: 272A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 68A Pulsed drain current: 272A Power dissipation: 170W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: THT Gate charge: 59nC Kind of package: tube Kind of channel: enhanced |
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