PSMN1R5-30YL,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5057 pF @ 12 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5057 pF @ 12 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1500+ | 46.33 грн |
3000+ | 42 грн |
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Технічний опис PSMN1R5-30YL,115 Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V, Power Dissipation (Max): 109W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 77.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5057 pF @ 12 V.
Інші пропозиції PSMN1R5-30YL,115 за ціною від 40.12 грн до 137.8 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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PSMN1R5-30YL,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V Power Dissipation (Max): 109W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5057 pF @ 12 V |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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PSMN1R5-30YL,115 | Виробник : Nexperia | MOSFET PSMN1R5-30YL/SOT669/LFPAK |
на замовлення 2196 шт: термін постачання 21-30 дні (днів) |
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PSMN1R5-30YL,115 | Виробник : NEXPERIA |
Description: NEXPERIA - PSMN1R5-30YL,115 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0013 ohm, SOT-669, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 109W Anzahl der Pins: 4Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm |
на замовлення 528 шт: термін постачання 21-31 дні (днів) |
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PSMN1R5-30YL,115 | Виробник : NEXPERIA | Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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PSMN1R5-30YL,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 790A; 109W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 790A Power dissipation: 109W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 77.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN1R5-30YL,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 790A; 109W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 790A Power dissipation: 109W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 77.9nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |