PSMN1R7-25YLDX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 12 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 42.8 грн |
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Технічний опис PSMN1R7-25YLDX Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 12 V.
Інші пропозиції PSMN1R7-25YLDX за ціною від 28.77 грн до 97.25 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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PSMN1R7-25YLDX | Виробник : Nexperia |
MOSFET PSMN1R7-25YLD/SOT669/LFPAK |
на замовлення 650 шт: термін постачання 21-30 дні (днів) |
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PSMN1R7-25YLDX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 12 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PSMN1R7-25YLDX | Виробник : Nexperia |
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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PSMN1R7-25YLDX | Виробник : Nexperia |
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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PSMN1R7-25YLDX | Виробник : NEXPERIA |
Trans MOSFET N-CH 25V 100A Automotive 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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| PSMN1R7-25YLDX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 152A Pulsed drain current: 860A Power dissipation: 135W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.11mΩ Mounting: SMD Gate charge: 46.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| PSMN1R7-25YLDX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 152A Pulsed drain current: 860A Power dissipation: 135W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.11mΩ Mounting: SMD Gate charge: 46.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |