PSMN2R4-30YLDX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 30.17 грн |
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Технічний опис PSMN2R4-30YLDX Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V, Power Dissipation (Max): 106W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 15 V.
Інші пропозиції PSMN2R4-30YLDX за ціною від 24.37 грн до 70.26 грн
| Фото | Назва | Виробник | Інформація |
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PSMN2R4-30YLDX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 15 V |
на замовлення 3228 шт: термін постачання 21-31 дні (днів) |
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PSMN2R4-30YLDX | Виробник : Nexperia |
MOSFET PSMN2R4-30YLD/SOT669/LFPAK |
на замовлення 6519 шт: термін постачання 21-30 дні (днів) |
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PSMN2R4-30YLDX | Виробник : NEXPERIA |
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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| PSMN2R4-30YLDX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 625A Power dissipation: 106W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 4mΩ Mounting: SMD Gate charge: 31.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
товар відсутній |
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| PSMN2R4-30YLDX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 625A Power dissipation: 106W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 4mΩ Mounting: SMD Gate charge: 31.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
товар відсутній |