PSMN3R9-25MLC,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.15mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1524 pF @ 12.5 V
Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.15mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1524 pF @ 12.5 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1500+ | 20.8 грн |
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Технічний опис PSMN3R9-25MLC,115 Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 4.15mOhm @ 25A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1524 pF @ 12.5 V.
Інші пропозиції PSMN3R9-25MLC,115 за ціною від 16.78 грн до 51.28 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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PSMN3R9-25MLC,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 70A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.15mOhm @ 25A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1524 pF @ 12.5 V |
на замовлення 1513 шт: термін постачання 21-31 дні (днів) |
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PSMN3R9-25MLC,115 | Виробник : Nexperia | MOSFET PSMN3R9-25MLC/SOT1210/mLFPAK |
на замовлення 1495 шт: термін постачання 21-30 дні (днів) |
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PSMN3R9-25MLC,115 | Виробник : NEXPERIA | Trans MOSFET N-CH 25V 70A 8-Pin LFPAK EP T/R |
товар відсутній |
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PSMN3R9-25MLC,115 | Виробник : Nexperia | Trans MOSFET N-CH 25V 70A 8-Pin LFPAK EP T/R |
товар відсутній |
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PSMN3R9-25MLC,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 390A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 70A Pulsed drain current: 390A Power dissipation: 69W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 4.85mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN3R9-25MLC,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 390A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 70A Pulsed drain current: 390A Power dissipation: 69W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 4.85mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |