PSMN4R1-30YLC,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 30V 92A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.35mOhm @ 20A, 10V
Power Dissipation (Max): 67W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1502 pF @ 15 V
на замовлення 1355 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.16 грн |
| 10+ | 34.08 грн |
| 100+ | 28.97 грн |
| 500+ | 24.22 грн |
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Технічний опис PSMN4R1-30YLC,115 Nexperia USA Inc.
Description: MOSFET N-CH 30V 92A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 92A (Tc), Rds On (Max) @ Id, Vgs: 4.35mOhm @ 20A, 10V, Power Dissipation (Max): 67W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1502 pF @ 15 V.
Інші пропозиції PSMN4R1-30YLC,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PSMN4R1-30YLC,115 | Виробник : NEXPERIA |
Trans MOSFET N-CH 30V 92A 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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| PSMN4R1-30YLC,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 92A; Idm: 367A; 67W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 367A Drain-source voltage: 30V Drain current: 92A On-state resistance: 4.75mΩ Type of transistor: N-MOSFET Power dissipation: 67W Polarisation: unipolar Gate charge: 23nC кількість в упаковці: 1 шт |
товар відсутній |
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PSMN4R1-30YLC,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 92A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 4.35mOhm @ 20A, 10V Power Dissipation (Max): 67W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1502 pF @ 15 V |
товар відсутній |
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PSMN4R1-30YLC,115 | Виробник : Nexperia |
MOSFET PSMN4R1-30YLC/SOT669/LFPAK |
товар відсутній |
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| PSMN4R1-30YLC,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 92A; Idm: 367A; 67W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 367A Drain-source voltage: 30V Drain current: 92A On-state resistance: 4.75mΩ Type of transistor: N-MOSFET Power dissipation: 67W Polarisation: unipolar Gate charge: 23nC |
товар відсутній |