PSMN4R2-60PLQ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8533 pF @ 25 V
Description: MOSFET N-CH 60V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8533 pF @ 25 V
на замовлення 2218 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 201.7 грн |
10+ | 162.95 грн |
100+ | 131.83 грн |
500+ | 109.97 грн |
1000+ | 94.16 грн |
2000+ | 88.66 грн |
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Технічний опис PSMN4R2-60PLQ Nexperia USA Inc.
Description: MOSFET N-CH 60V 130A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8533 pF @ 25 V.
Інші пропозиції PSMN4R2-60PLQ за ціною від 95.89 грн до 219.09 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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PSMN4R2-60PLQ | Виробник : Nexperia | MOSFET PSMN4R2-60PL/SOT78/SIL3P |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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PSMN4R2-60PLQ | Виробник : NEXPERIA | Trans MOSFET N-CH 60V 130A 3-Pin(3+Tab) TO-220AB Rail |
товар відсутній |
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PSMN4R2-60PLQ | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 124A; 263W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 124A Power dissipation: 263W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN4R2-60PLQ | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 124A; 263W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 124A Power dissipation: 263W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |