на замовлення 35 шт:
термін постачання 707-716 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.69 грн |
| 10+ | 184.1 грн |
| 100+ | 130.86 грн |
| 500+ | 111.6 грн |
| 1000+ | 94.32 грн |
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Технічний опис PSMN6R9-100YSFX Nexperia
Description: MOSFET N-CH 100V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Power Dissipation (Max): 238W, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50.3 nC @ 10 V.
Інші пропозиції PSMN6R9-100YSFX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PSMN6R9-100YSFX | Виробник : NEXPERIA |
 Trans MOSFET N-CH 100V 90A 5-Pin(4+Tab) LFPAK T/R |
на замовлення 139500 шт: термін постачання 21-31 дні (днів) |
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| PSMN6R9-100YSFX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 88A Pulsed drain current: 360A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 50.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN6R9-100YSFX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 100A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Power Dissipation (Max): 238W Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50.3 nC @ 10 V |
товар відсутній |
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PSMN6R9-100YSFX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Power Dissipation (Max): 238W Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50.3 nC @ 10 V |
товар відсутній |
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| PSMN6R9-100YSFX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 88A Pulsed drain current: 360A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 50.3nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |