PSMN8R0-80YLX NEXPERIA
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис PSMN8R0-80YLX NEXPERIA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W, Type of transistor: N-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 75A, Pulsed drain current: 423A, Power dissipation: 238W, Case: LFPAK56; PowerSO8; SOT669, Gate-source voltage: ±20V, On-state resistance: 21.3mΩ, Mounting: SMD, Gate charge: 104nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції PSMN8R0-80YLX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PSMN8R0-80YLX | Виробник : Nexperia USA Inc. | Description: MOSFET N-CH 80V 100A LFPAK56 |
товар відсутній |
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PSMN8R0-80YLX | Виробник : Nexperia | MOSFET PSMN8R0-80YL/LFPAK/REEL 7" Q1/ |
товар відсутній |
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| PSMN8R0-80YLX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 80V Drain current: 75A Pulsed drain current: 423A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 21.3mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |