Технічний опис PSMN8R9-100BSEJ NEXPERIA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 74A, Pulsed drain current: 419A, Power dissipation: 296W, Case: D2PAK; SOT404, Gate-source voltage: ±20V, On-state resistance: 27mΩ, Mounting: SMD, Gate charge: 160nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції PSMN8R9-100BSEJ
| Фото | Назва | Виробник | Інформація |
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| PSMN8R9-100BSEJ | Виробник : NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 74A Pulsed drain current: 419A Power dissipation: 296W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R9-100BSEJ | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 108A D2PAK |
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| PSMN8R9-100BSEJ | Виробник : Nexperia |
MOSFET PSMN8R9-100BSE/SOT404/D2PAK |
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| PSMN8R9-100BSEJ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 74A Pulsed drain current: 419A Power dissipation: 296W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |