PSMNR70-40SSHJ Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 40V 425A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 180.41 грн |
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Технічний опис PSMNR70-40SSHJ Nexperia USA Inc.
Description: MOSFET N-CH 40V 425A LFPAK88, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 425A (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V.
Інші пропозиції PSMNR70-40SSHJ за ціною від 163.41 грн до 370.77 грн
| Фото | Назва | Виробник | Інформація |
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PSMNR70-40SSHJ | Виробник : Nexperia |
MOSFET PSMNR70-40SSH/SOT1235/LFPAK88 |
на замовлення 1731 шт: термін постачання 21-30 дні (днів) |
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PSMNR70-40SSHJ | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 425A LFPAK88 Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 425A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V |
на замовлення 3105 шт: термін постачання 21-31 дні (днів) |
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| PSMNR70-40SSHJ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 350A; Idm: 1983A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 350A Pulsed drain current: 1983A Power dissipation: 375W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 1.53mΩ Mounting: SMD Gate charge: 202nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| PSMNR70-40SSHJ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 350A; Idm: 1983A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 350A Pulsed drain current: 1983A Power dissipation: 375W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 1.53mΩ Mounting: SMD Gate charge: 202nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |