Технічний опис PUMD9-QZ NEXPERIA
Description: PUMD9-Q/SOT363/SC-88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V, Frequency - Transition: 230MHz, 180MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: 6-TSSOP, Part Status: Active.
Інші пропозиції PUMD9-QZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PUMD9-QZ | Виробник : Nexperia |
 Trans Digital BJT NPN/PNP 50V 100mA 300mW Automotive AEC-Q101 6-Pin TSSOP T/R |
товар відсутній |
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| PUMD9-QZ | Виробник : Nexperia USA Inc. |
Description: PUMD9-Q/SOT363/SC-88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Frequency - Transition: 230MHz, 180MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active |
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PUMD9-QZ | Виробник : Nexperia |
Bipolar Transistors - Pre-Biased PUMD9-Q/SOT363/SC-88 |
товар відсутній |