QH8MA2TCR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N/P-CH 30V 4.5A/3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 1648 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.08 грн |
| 10+ | 31.9 грн |
| 100+ | 22.09 грн |
| 500+ | 17.32 грн |
| 1000+ | 14.74 грн |
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Технічний опис QH8MA2TCR Rohm Semiconductor
Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A, Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Інші пропозиції QH8MA2TCR за ціною від 12.62 грн до 41.07 грн
| Фото | Назва | Виробник | Інформація |
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QH8MA2TCR | Виробник : ROHM Semiconductor |
MOSFET 30V Nch+Pch Power MOSFET |
на замовлення 2920 шт: термін постачання 21-30 дні (днів) |
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| QH8MA2TCR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/3A; Idm: 12A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.5/3A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 56/115mΩ Mounting: SMD Gate charge: 7.8/8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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QH8MA2TCR | Виробник : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товар відсутній |
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| QH8MA2TCR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/3A; Idm: 12A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.5/3A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 56/115mΩ Mounting: SMD Gate charge: 7.8/8.4nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |