QH8MA4TCR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/8A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 30V 9A/8A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 24.12 грн |
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Технічний опис QH8MA4TCR Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/8A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A, 8A, Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Інші пропозиції QH8MA4TCR за ціною від 21.06 грн до 62 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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QH8MA4TCR | Виробник : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 9A/8A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 8A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3209 шт: термін постачання 21-31 дні (днів) |
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QH8MA4TCR | Виробник : ROHM Semiconductor | MOSFET Zener Diode, 100mW, 2 Pin. |
на замовлення 2326 шт: термін постачання 21-30 дні (днів) |
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QH8MA4TCR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/8A; Idm: 18A; 2.6W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 9/8A Pulsed drain current: 18A Power dissipation: 2.6W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 23.7/40.3mΩ Mounting: SMD Gate charge: 15.5/19.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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QH8MA4TCR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/8A; Idm: 18A; 2.6W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 9/8A Pulsed drain current: 18A Power dissipation: 2.6W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 23.7/40.3mΩ Mounting: SMD Gate charge: 15.5/19.6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |