Технічний опис QS5U33TR
Category: SMD P channel transistors, Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A, Type of transistor: P-MOSFET + Schottky, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -2A, Pulsed drain current: -8A, Power dissipation: 1.25W, Case: TSOT25, Gate-source voltage: ±20V, On-state resistance: 0.225Ω, Mounting: SMD, Gate charge: 3.4nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.
Інші пропозиції QS5U33TR
Фото | Назва | Виробник | Інформація |
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QS5U33TR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±20V On-state resistance: 0.225Ω Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U33TR | Виробник : Rohm Semiconductor | Description: MOSFET P-CH 30V 2A TSMT5 |
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QS5U33TR | Виробник : ROHM Semiconductor | MOSFET 30V; 2A; N-Channel Single |
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QS5U33TR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±20V On-state resistance: 0.225Ω Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |