Технічний опис RFP30P05 INTERSIL
Description: MOSFET P-CH 50V 30A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V.
Інші пропозиції RFP30P05
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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RFP30P05 | Виробник : onsemi |
Description: MOSFET P-CH 50V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
товар відсутній |
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RFP30P05 | Виробник : onsemi / Fairchild | MOSFET TO-220AB P-Ch Power |
товар відсутній |