RM24C256C-LSNI-B Dialog Semiconductor
Виробник: Dialog SemiconductorEEPROM Serial-2Wire 256K-bit 512Pages x 64 1.8V/2.5V/3.3V 8-Pin SOIC N Tube
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Технічний опис RM24C256C-LSNI-B Dialog Semiconductor
Description: IC CBRAM 256KBIT I2C 1MHZ 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Memory Size: 256Kbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: CBRAM, Clock Frequency: 1 MHz, Memory Format: CBRAM®, Supplier Device Package: 8-SOIC, Write Cycle Time - Word, Page: 100µs, 5ms, Memory Interface: I2C, Memory Organization: 64 Bytes Page Size, DigiKey Programmable: Not Verified.
Інші пропозиції RM24C256C-LSNI-B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| RM24C256C-LSNI-B | Виробник : Dialog Semiconductor |
EEPROM Serial-2Wire 256K-bit 512Pages x 64 1.8V/2.5V/3.3V 8-Pin SOIC N Tube |
товар відсутній |
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RM24C256C-LSNI-B | Виробник : Renesas Electronics Corporation |
Description: IC CBRAM 256KBIT I2C 1MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: CBRAM Clock Frequency: 1 MHz Memory Format: CBRAM® Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 100µs, 5ms Memory Interface: I2C Memory Organization: 64 Bytes Page Size DigiKey Programmable: Not Verified |
товар відсутній |