Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1108,LF(CT

RN1108,LF(CT Toshiba Semiconductor and Storage

Name: RN1108,LF(CT
Brand: Toshiba Semiconductor and Storage
SKU: 13278145-3
Price: 2.56 UAH
Availability: InStock

Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms

на замовлення 2865 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
20+	14.37 грн
25+	11.49 грн
100+	6.1 грн
500+	3.76 грн
1000+	2.56 грн

Мінімальне замовлення: 20

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Технічний опис RN1108,LF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SSM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Інші пропозиції RN1108,LF(CT

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	RN1108,LF(CT	Виробник : Toshiba	Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)	товар відсутній
	RN1108,LF(CT	Виробник : Toshiba Semiconductor and Storage	Description: TRANS PREBIAS NPN 50V 0.1A SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms	товар відсутній