RRS100P03HZGTB Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: PCH -30V -10A POWER MOSFET. RRS1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
на замовлення 1235 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.93 грн |
| 10+ | 106.21 грн |
| 100+ | 84.54 грн |
| 500+ | 67.13 грн |
| 1000+ | 56.96 грн |
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Технічний опис RRS100P03HZGTB Rohm Semiconductor
Description: PCH -30V -10A POWER MOSFET. RRS1, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V.
Інші пропозиції RRS100P03HZGTB за ціною від 52.48 грн до 140.27 грн
| Фото | Назва | Виробник | Інформація |
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RRS100P03HZGTB | Виробник : ROHM Semiconductor |
MOSFET AECQ |
на замовлення 2471 шт: термін постачання 21-30 дні (днів) |
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RRS100P03HZGTB | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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RRS100P03HZGTB | Виробник : Rohm Semiconductor |
Description: PCH -30V -10A POWER MOSFET. RRS1 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V |
товар відсутній |
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RRS100P03HZGTB | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |