RSD220N06TL
Виробник: на замовлення 3000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис RSD220N06TL
Description: MOSFET N-CH 60V 22A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Power Dissipation (Max): 20W (Ta), Supplier Device Package: CPT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V.
Інші пропозиції RSD220N06TL
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RSD220N06TL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 60V 22A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Power Dissipation (Max): 20W (Ta) Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V |
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RSD220N06TL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 60V 22A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Power Dissipation (Max): 20W (Ta) Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V |
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RSD220N06TL | Виробник : ROHM Semiconductor |
MOSFET Nch 60V 22A MOSFET |
товар відсутній |