RSR010N10HZGTL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 17.37 грн |
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Технічний опис RSR010N10HZGTL Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції RSR010N10HZGTL за ціною від 15.29 грн до 49.23 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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RSR010N10HZGTL | Виробник : Rohm Semiconductor | Trans MOSFET N-CH 100V 1A Automotive AEC-Q101 3-Pin TSMT T/R |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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RSR010N10HZGTL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 100V 1A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6013 шт: термін постачання 21-31 дні (днів) |
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RSR010N10HZGTL | Виробник : ROHM Semiconductor | MOSFET Nch 100V 1A Small Signal MOSFET for Automotive. RSR010N10HZG is a low on-resistance MOSFET for automotive, suitable for DC-DC converter applications. |
на замовлення 3692 шт: термін постачання 21-30 дні (днів) |
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RSR010N10HZGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.5nC Gate-source voltage: ±20V Pulsed drain current: 4A Kind of channel: enhanced Case: TSMT3 Drain-source voltage: 100V Drain current: 1A On-state resistance: 0.58Ω кількість в упаковці: 1 шт |
товар відсутній |
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RSR010N10HZGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.5nC Gate-source voltage: ±20V Pulsed drain current: 4A Kind of channel: enhanced Case: TSMT3 Drain-source voltage: 100V Drain current: 1A On-state resistance: 0.58Ω |
товар відсутній |