RX3P07CBHC16 ROHM Semiconductor
Виробник: ROHM SemiconductorMOSFET RX3P07CBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 392.13 грн |
| 10+ | 324.66 грн |
| 25+ | 266.37 грн |
| 100+ | 228.5 грн |
| 250+ | 215.88 грн |
| 500+ | 203.93 грн |
| 1000+ | 172.04 грн |
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Технічний опис RX3P07CBHC16 ROHM Semiconductor
Description: NCH 100V 120A, TO-220AB, POWER M, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V.
Інші пропозиції RX3P07CBHC16
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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RX3P07CBHC16 | Виробник : Rohm Semiconductor |
Description: NCH 100V 120A, TO-220AB, POWER M Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V |
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