Технічний опис S1JLWH Taiwan Semiconductor
Description: DIODE GEN PURP 600V 1A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.
Інші пропозиції S1JLWH
| Фото | Назва | Виробник | Інформація |
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S1JLWH | Виробник : Taiwan Semiconductor |
 Diode 600V 1A Automotive 2-Pin SOD-123W T/R |
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S1JLWH | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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S1JLWH | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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S1JLWH | Виробник : Taiwan Semiconductor |
Rectifiers 1A, 600V, Standard Recovery Rectifier |
товар відсутній |