S2M0040120K-1 SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 320.5W
Technology: SiC
Kind of package: tube
Gate charge: 118nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.2kV
Drain current: 55A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 320.5W
Technology: SiC
Kind of package: tube
Gate charge: 118nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.2kV
Drain current: 55A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 888.98 грн |
| 3+ | 780.5 грн |
Відгуки про товар
Написати відгук
Технічний опис S2M0040120K-1 SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W, Mounting: THT, Features of semiconductor devices: Kelvin terminal, Case: TO247-4, Power dissipation: 320.5W, Technology: SiC, Kind of package: tube, Gate charge: 118nC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Pulsed drain current: 160A, Drain-source voltage: 1.2kV, Drain current: 55A, On-state resistance: 40mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, кількість в упаковці: 1 шт.
Інші пропозиції S2M0040120K-1 за ціною від 905.05 грн до 1066.77 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S2M0040120K-1 | Виробник : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W Mounting: THT Features of semiconductor devices: Kelvin terminal Case: TO247-4 Power dissipation: 320.5W Technology: SiC Kind of package: tube Gate charge: 118nC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 160A Drain-source voltage: 1.2kV Drain current: 55A On-state resistance: 40mΩ Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 7-14 дні (днів) |
|