Технічний опис S80KS2562GABHI023 Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA, Packaging: Tape & Reel (TR), Package / Case: 24-VBGA, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 2V, Technology: PSRAM (Pseudo SRAM), Clock Frequency: 200 MHz, Memory Format: PSRAM, Supplier Device Package: 24-FBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 35ns, Memory Interface: HyperBus, Access Time: 35 ns, Memory Organization: 32M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції S80KS2562GABHI023
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
S80KS2562GABHI023 | Виробник : Infineon Technologies | PSRAM Sync Single Port 256M-bit 32M x 8 35ns 24-Pin FBGA T/R |
товар відсутній |
||
S80KS2562GABHI023 | Виробник : Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA Packaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
||
S80KS2562GABHI023 | Виробник : Infineon Technologies | DRAM HyperRAM |
товар відсутній |