Технічний опис SDP10S30 INFINEON
Description: DIODE SIL CARB 300V 10A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 600pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO220-3, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 300 V.
Інші пропозиції SDP10S30
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SDP10S30 | Виробник : Infineon Technologies |
 Description: DIODE SIL CARB 300V 10A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 600pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO220-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 300 V |
товар відсутній |
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SDP10S30 | Виробник : Infineon Technologies |
Schottky Diodes & Rectifiers Silicon Carbide Schottky Diode 300V |
товар відсутній |