SEMIX202GB12E4S 27890110 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 200A
Pulsed collector current: 600A
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; thermistor
Case: SEMIX2S
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
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Технічний опис SEMIX202GB12E4S 27890110 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Application: for UPS; frequency changer; Inverter; photovoltaics, Collector current: 200A, Pulsed collector current: 600A, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge; thermistor, Case: SEMIX2S, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX202GB12E4S 27890110
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SEMIX202GB12E4S 27890110 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Application: for UPS; frequency changer; Inverter; photovoltaics Collector current: 200A Pulsed collector current: 600A Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge; thermistor Case: SEMIX2S Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V |
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