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SEMIX453GD12E4C 27890212 SEMIKRON DANFOSS


SEMIX453GD12E4C.pdf Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: SEMIX®33c
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.35kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис SEMIX453GD12E4C 27890212 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT three-phase bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 450A, Case: SEMIX®33c, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1.35kA, Mechanical mounting: screw, кількість в упаковці: 1 шт.

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SEMIX453GD12E4C 27890212 Виробник : SEMIKRON DANFOSS SEMIX453GD12E4C.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: SEMIX®33c
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.35kA
Mechanical mounting: screw
товар відсутній