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SEMIX453GM12E4P 27895064 SEMIKRON DANFOSS


SEMIX453GM12E4P.pdf Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT x2; thermistor
Case: SEMiX® 3p
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 1.35kA
кількість в упаковці: 1 шт
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Технічний опис SEMIX453GM12E4P 27895064 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT x2; thermistor, Case: SEMiX® 3p, Max. off-state voltage: 1.2kV, Semiconductor structure: common emitter; transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 450A, Pulsed collector current: 1.35kA, кількість в упаковці: 1 шт.

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SEMIX453GM12E4P 27895064 Виробник : SEMIKRON DANFOSS SEMIX453GM12E4P.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT x2; thermistor
Case: SEMiX® 3p
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 1.35kA
товар відсутній