SI2302B-TP

SI2302B-TP Micro Commercial Co


SI2302B(SOT-23).pdf Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V
Power Dissipation (Max): 1.56W (Tj)
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Технічний опис SI2302B-TP Micro Commercial Co

Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 50µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V, Power Dissipation (Max): 1.56W (Tj).

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SI2302B-TP SI2302B-TP Виробник : Micro Commercial Components (MCC) SI2302B_SOT_23_-3369960.pdf MOSFET
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