SI2302DS,215 NXP Semiconductors

Description: MOSFET N-CH 20V 2.5A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 830mW (Tc), Vgs(th) (Max) @ Id: 650mV @ 1mA (Min), Supplier Device Package: SOT-23 (TO-236AB), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V.