на замовлення 184350 шт:
термін постачання 917-926 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.28 грн |
| 10+ | 42.7 грн |
| 100+ | 28.5 грн |
| 500+ | 22.57 грн |
| 1000+ | 18.01 грн |
| 3000+ | 17.87 грн |
Відгуки про товар
Написати відгук
Технічний опис SI3129DV-T1-GE3 Vishay / Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 5.4A (Tc), Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V, Power Dissipation (Max): 2W (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 40 V.
Інші пропозиції SI3129DV-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SI3129DV-T1-GE3 | Виробник : VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -5.4A; Idm: -20A Mounting: SMD Case: TSOP6 Kind of package: reel; tape Drain-source voltage: -80V Drain current: -5.4A On-state resistance: 124.2mΩ Type of transistor: P-MOSFET Power dissipation: 4.2W Polarisation: unipolar Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Technology: TrenchFET® кількість в упаковці: 3000 шт |
товар відсутній |
||
 |
SI3129DV-T1-GE3 | Виробник : Vishay |
Trans MOSFET P-CH 80V 3.8A 6-Pin TSOP T/R |
товар відсутній |
|
 |
SI3129DV-T1-GE3 | Виробник : Vishay Siliconix |
Description: P-CHANNEL 80 V (D-S) MOSFET TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 5.4A (Tc) Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 40 V |
товар відсутній |
|
|
|
SI3129DV-T1-GE3 | Виробник : Vishay Siliconix |
Description: P-CHANNEL 80 V (D-S) MOSFET TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 5.4A (Tc) Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 40 V |
товар відсутній |
|
| SI3129DV-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -5.4A; Idm: -20A Mounting: SMD Case: TSOP6 Kind of package: reel; tape Drain-source voltage: -80V Drain current: -5.4A On-state resistance: 124.2mΩ Type of transistor: P-MOSFET Power dissipation: 4.2W Polarisation: unipolar Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Technology: TrenchFET® |
товар відсутній |