на замовлення 7467 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.23 грн |
| 10+ | 70.02 грн |
| 100+ | 47.47 грн |
| 500+ | 40.26 грн |
| 1000+ | 32.78 грн |
| 2500+ | 30.18 грн |
| 5000+ | 29.31 грн |
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Технічний опис SI4900DY-T1-GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.3A, Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції SI4900DY-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI4900DY-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R |
товар відсутній |
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SI4900DY-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R |
товар відсутній |
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| SI4900DY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: 20A Case: SO8 Drain-source voltage: 60V Drain current: 5.3A On-state resistance: 72mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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SI4900DY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
товар відсутній |
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SI4900DY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
товар відсутній |
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| SI4900DY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: 20A Case: SO8 Drain-source voltage: 60V Drain current: 5.3A On-state resistance: 72mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhanced |
товар відсутній |