SI4922BDY-T1-GE3 Vishay Semiconductors
на замовлення 13995 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.5 грн |
| 10+ | 93.67 грн |
| 100+ | 65.23 грн |
| 250+ | 59.88 грн |
| 500+ | 54.34 грн |
| 1000+ | 46.6 грн |
| 2500+ | 44.13 грн |
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Технічний опис SI4922BDY-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 8A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V, Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції SI4922BDY-T1-GE3 за ціною від 118.44 грн до 118.44 грн
| Фото | Назва | Виробник | Інформація |
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SI4922BDY-T1-GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 8A 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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SI4922BDY-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R |
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| SI4922BDY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±12V Pulsed drain current: 35A Case: SO8 Drain-source voltage: 30V Drain current: 8A On-state resistance: 24mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Gate charge: 62nC Technology: TrenchFET® Kind of channel: enhanced кількість в упаковці: 2500 шт |
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SI4922BDY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
товар відсутній |
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| SI4922BDY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±12V Pulsed drain current: 35A Case: SO8 Drain-source voltage: 30V Drain current: 8A On-state resistance: 24mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Gate charge: 62nC Technology: TrenchFET® Kind of channel: enhanced |
товар відсутній |