SI7157DP-T1-GE3

Product id: 148717
Manufacturer:
Electronic Components and Parts - Other components 3

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On stock/available

Technical description SI7157DP-T1-GE3

Price SI7157DP-T1-GE3 From 0.91 $ to 13.21 $

SI7157DP-T1-GE3
SI7157DP-T1-GE3
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 625nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Base Part Number: SI7157
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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available 13112 pc(s)
lead time 7-22 days
3000+ 1.04 $
6000+ 1.01 $
SI7157DP-T1-GE3
SI7157DP-T1-GE3
Manufacturer: Vishay / Siliconix
MOSFET -20V Vds 12V Vgs PowerPAK SO-8
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available 1126 pc(s)
lead time 8-21 days
1+ 2.49 $
10+ 2 $
100+ 1.36 $
500+ 1.19 $
SI7157DP-T1-GE3
SI7157DP-T1-GE3
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Base Part Number: SI7157
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 625nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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available 13112 pc(s)
lead time 7-22 days
1+ 2.53 $
10+ 2.07 $
25+ 1.83 $
100+ 1.45 $
500+ 1.23 $
1000+ 1 $
SI7157DP-T1-GE3
SI7157DP-T1-GE3
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
FET Type: P-Channel
Base Part Number: SI7157
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Surcharge for the reel of $7)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 625nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
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available 8334 pc(s)
lead time 7-22 days
1+ 13.21 $
10+ 3.14 $
25+ 2.15 $
100+ 1.42 $
250+ 1.35 $
500+ 1.14 $
1000+ 0.91 $
SI7157DP-T1-GE3
Manufacturer:
SI7157DP-T1-GE3 MOSFET P-CH 20V 60A PPAK SO-8
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out of stock, you can ask lead time by adding item to cart

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