SIA811ADJ-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET P-CH 20V 4.5A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V
на замовлення 2765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 35.93 грн |
| 10+ | 29.68 грн |
| 100+ | 20.63 грн |
| 500+ | 15.12 грн |
| 1000+ | 12.29 грн |
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Технічний опис SIA811ADJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V.
Інші пропозиції SIA811ADJ-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SIA811ADJ-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W Type of transistor: P-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -8A Power dissipation: 6.8W Gate-source voltage: ±8V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIA811ADJ-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V |
товар відсутній |
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SIA811ADJ-T1-GE3 | Виробник : Vishay / Siliconix |
MOSFET -20V Vds 8V Vgs PowerPAK SC-70 |
товар відсутній |
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| SIA811ADJ-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W Type of transistor: P-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -8A Power dissipation: 6.8W Gate-source voltage: ±8V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |