SIDR140DP-T1-GE3 Vishay Semiconductors
на замовлення 8865 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
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2+ | 169.53 грн |
10+ | 139.76 грн |
100+ | 96.43 грн |
250+ | 89.17 грн |
500+ | 81.24 грн |
1000+ | 69.35 грн |
3000+ | 63.61 грн |
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Технічний опис SIDR140DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 25V 79A/100A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V.
Інші пропозиції SIDR140DP-T1-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIDR140DP-T1-GE3 | Виробник : VISHAY | SIDR140DP-T1-GE3 SMD N channel transistors |
товар відсутній |
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SIDR140DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 25V 79A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V |
товар відсутній |
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SIDR140DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 25V 79A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V |
товар відсутній |