SIDR610DP-T1-GE3 Vishay / Siliconix
на замовлення 5295 шт:
термін постачання 329-338 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.74 грн |
| 10+ | 206.61 грн |
| 25+ | 170.41 грн |
| 100+ | 142.01 грн |
| 250+ | 137.39 грн |
| 500+ | 126.16 грн |
| 1000+ | 108.32 грн |
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Технічний опис SIDR610DP-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 8.9A/39.6A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc), Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V.
Інші пропозиції SIDR610DP-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIDR610DP-T1-GE3 | Виробник : VISHAY |
 SIDR610DP-T1-GE3 SMD N channel transistors |
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SIDR610DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 8.9A/39.6A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V |
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SIDR610DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 8.9A/39.6A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V |
товар відсутній |