SIDR622DP-T1-GE3 Vishay / Siliconix
на замовлення 5750 шт:
термін постачання 329-338 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.6 грн |
| 10+ | 171.67 грн |
| 100+ | 118.89 грн |
| 250+ | 109.64 грн |
| 500+ | 99.74 грн |
| 1000+ | 85.21 грн |
| 3000+ | 83.22 грн |
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Технічний опис SIDR622DP-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 150V 64.6A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc), Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V.
Інші пропозиції SIDR622DP-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIDR622DP-T1-GE3 | Виробник : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 56.7A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 56.7A Pulsed drain current: 100A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIDR622DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 150V 64.6A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V |
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SIDR622DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 150V 64.6A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V |
товар відсутній |
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| SIDR622DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 56.7A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 56.7A Pulsed drain current: 100A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |