на замовлення 8087 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.46 грн |
| 10+ | 112.42 грн |
| 100+ | 83.88 грн |
| 250+ | 79.92 грн |
| 500+ | 75.3 грн |
| 1000+ | 69.35 грн |
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Технічний опис SIDR680ADP-T1-RE3 Vishay Semiconductors
Description: MOSFET N-CH 80V 30.7A/137A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc), Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V.
Інші пропозиції SIDR680ADP-T1-RE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIDR680ADP-T1-RE3 | Виробник : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 137A; Idm: 300A Mounting: SMD Kind of package: reel; tape Pulsed drain current: 300A Drain-source voltage: 80V Drain current: 137A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 83nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 3000 шт |
товар відсутній |
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| SIDR680ADP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 80V 30.7A/137A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V |
товар відсутній |
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| SIDR680ADP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 80V 30.7A/137A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V |
товар відсутній |
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| SIDR680ADP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 137A; Idm: 300A Mounting: SMD Kind of package: reel; tape Pulsed drain current: 300A Drain-source voltage: 80V Drain current: 137A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 83nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |