Технічний опис SIHFR430A-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 3.2A, Pulsed drain current: 20A, Power dissipation: 110W, Case: DPAK; TO252, Gate-source voltage: ±30V, On-state resistance: 1.7Ω, Mounting: SMD, Gate charge: 24nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції SIHFR430A-GE3
| Фото | Назва | Виробник | Інформація |
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| SIHFR430A-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.2A Pulsed drain current: 20A Power dissipation: 110W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHFR430A-GE3 | Виробник : Vishay / Siliconix | MOSFET |
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| SIHFR430A-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.2A Pulsed drain current: 20A Power dissipation: 110W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |