SIHG21N80AEF-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
на замовлення 464 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 221.71 грн |
10+ | 179 грн |
100+ | 144.8 грн |
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Технічний опис SIHG21N80AEF-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V.
Інші пропозиції SIHG21N80AEF-GE3 за ціною від 113.49 грн до 234.44 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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SIHG21N80AEF-GE3 | Виробник : Vishay / Siliconix | MOSFET N-CHANNEL 800V |
на замовлення 490 шт: термін постачання 175-184 дні (днів) |
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SIHG21N80AEF-GE3 | Виробник : Vishay | Trans MOSFET N-CH 800V 16.3A |
товар відсутній |
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SIHG21N80AEF-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.3A Pulsed drain current: 37A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIHG21N80AEF-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.3A Pulsed drain current: 37A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |