SIHK045N60E-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: E SERIES POWER MOSFET POWERPAK 1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 17A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4013 pF @ 100 V
на замовлення 1806 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 471.06 грн |
| 10+ | 388.92 грн |
| 100+ | 335.62 грн |
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Технічний опис SIHK045N60E-T1-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 17A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4013 pF @ 100 V.
Інші пропозиції SIHK045N60E-T1-GE3 за ціною від 426.5 грн до 718.2 грн
| Фото | Назва | Виробник | Інформація |
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SIHK045N60E-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET N-CHANNEL 600V |
на замовлення 2585 шт: термін постачання 21-30 дні (днів) |
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| SIHK045N60E-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 600V 48A T/R |
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| SIHK045N60E-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; Idm: 138A; 278W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Pulsed drain current: 138A Power dissipation: 278W Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
товар відсутній |
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SIHK045N60E-T1-GE3 | Виробник : Vishay Siliconix |
Description: E SERIES POWER MOSFET POWERPAK 1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 17A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4013 pF @ 100 V |
товар відсутній |
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| SIHK045N60E-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; Idm: 138A; 278W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Pulsed drain current: 138A Power dissipation: 278W Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |