SIR578DP-T1-RE3 VISHAY
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
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Технічний опис SIR578DP-T1-RE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 70.2A, Pulsed drain current: 200A, Power dissipation: 104W, Case: PowerPAK® SO8, Gate-source voltage: ±20V, On-state resistance: 10mΩ, Mounting: SMD, Gate charge: 49nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 3000 шт.
Інші пропозиції SIR578DP-T1-RE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIR578DP-T1-RE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 70.2A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced |
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