SIS488DN-T1-GE3

SIS488DN-T1-GE3 Vishay Semiconductors


sis488dn.pdf Виробник: Vishay Semiconductors
MOSFET RECOMMENDED ALT 781-SIS434DN-GE3
на замовлення 5989 шт:

термін постачання 566-575 дні (днів)
Кількість Ціна без ПДВ
5+66.34 грн
10+ 54.16 грн
100+ 36.6 грн
500+ 31.09 грн
1000+ 25.31 грн
3000+ 25.24 грн
9000+ 24.78 грн
Мінімальне замовлення: 5
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Технічний опис SIS488DN-T1-GE3 Vishay Semiconductors

Description: MOSFET N-CH 40V 40A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V.

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SIS488DN-T1-GE3 SIS488DN-T1-GE3 Виробник : Vishay sis488dn.pdf Trans MOSFET N-CH Si 40V 40A 8-Pin PowerPAK 1212 EP
товар відсутній
SIS488DN-T1-GE3 SIS488DN-T1-GE3 Виробник : Vishay sis488dn.pdf Trans MOSFET N-CH Si 40V 40A 8-Pin PowerPAK 1212 EP
товар відсутній
SIS488DN-T1-GE3 SIS488DN-T1-GE3 Виробник : Vishay sis488dn.pdf Trans MOSFET N-CH Si 40V 40A 8-Pin PowerPAK 1212 EP
товар відсутній
SIS488DN-T1-GE3 Виробник : VISHAY sis488dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 100A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIS488DN-T1-GE3 SIS488DN-T1-GE3 Виробник : Vishay Siliconix sis488dn.pdf Description: MOSFET N-CH 40V 40A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V
товар відсутній
SIS488DN-T1-GE3 SIS488DN-T1-GE3 Виробник : Vishay Siliconix sis488dn.pdf Description: MOSFET N-CH 40V 40A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V
товар відсутній
SIS488DN-T1-GE3 Виробник : VISHAY sis488dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 100A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній