SISS46DN-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 100V 12.5/45.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 45.19 грн |
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Технічний опис SISS46DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 12.5/45.3A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc), Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V.
Інші пропозиції SISS46DN-T1-GE3 за ціною від 42.98 грн до 117.74 грн
| Фото | Назва | Виробник | Інформація |
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SISS46DN-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SISS46DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 45.3 A, 0.0106 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 65.7W Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0106ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (10-Jun-2022) |
на замовлення 2906 шт: термін постачання 21-31 дні (днів) |
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SISS46DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 12.5/45.3A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V |
на замовлення 6018 шт: термін постачання 21-31 дні (днів) |
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SISS46DN-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S |
на замовлення 10966 шт: термін постачання 21-30 дні (днів) |
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SISS46DN-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SISS46DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 45.3 A, 0.0106 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 45.3A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.4V euEccn: NLR Verlustleistung: 65.7W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0106ohm |
на замовлення 2836 шт: термін постачання 21-31 дні (днів) |
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| SISS46DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 36.2A; Idm: 100A Case: PowerPAK® 1212-8 Mounting: SMD On-state resistance: 14.6mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Drain current: 36.2A Drain-source voltage: 100V Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A кількість в упаковці: 1 шт |
товар відсутній |
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| SISS46DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 36.2A; Idm: 100A Case: PowerPAK® 1212-8 Mounting: SMD On-state resistance: 14.6mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Drain current: 36.2A Drain-source voltage: 100V Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A |
товар відсутній |