SIZ300DT-T1-GE3 - Transistors - Field N-cannal

SIZ300DT-T1-GE3

SIZ300DT-T1-GE3

Product id: 106566
Manufacturer:
Transistors - Field N-cannal

siz300dt.pdf
On stock/available

Technical description SIZ300DT-T1-GE3

Price SIZ300DT-T1-GE3 From 23.57 UAH to 54.49 UAH

SIZ300DT-T1-GE3
SIZ300DT-T1-GE3
Manufacturer: Vishay / Siliconix
MOSFET RECOMMENDED ALT 78-SIZ342DT-T1-GE3
siz300dt-1765311.pdf
available 2730 pc(s)
lead time 8-21 days
1+ 49.19 UAH
10+ 41.17 UAH
100+ 27.79 UAH
500+ 23.57 UAH
SIZ300DT-T1-GE3
SIZ300DT-T1-GE3
Manufacturer: Vishay Siliconix
Description: MOSFET 2N-CH 30V 11A POWERPAIR
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair®
Base Part Number: SIZ300
siz300dt.pdf
available 284 pc(s)
lead time 7-22 days
1+ 54.49 UAH
10+ 48.44 UAH
100+ 34.6 UAH
SIZ300DT-T1-GE3
SIZ300DT-T1-GE3
Manufacturer: Vishay Siliconix
Description: MOSFET 2N-CH 30V 11A POWERPAIR
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair®
Base Part Number: SIZ300
siz300dt.pdf
out of stock, you can ask lead time by adding item to cart