SKIIP 03NEC066V3 25232410 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: MiniSKiiP® 0
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: MiniSKiiP® 0
кількість в упаковці: 1 шт
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Технічний опис SKIIP 03NEC066V3 25232410 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; single-phase diode bridge; screw, Application: for UPS; frequency changer; Inverter; photovoltaics, Max. off-state voltage: 0.6kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 15A, Pulsed collector current: 30A, Electrical mounting: Press-Fit, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge, Case: MiniSKiiP® 0, кількість в упаковці: 1 шт.
Інші пропозиції SKIIP 03NEC066V3 25232410
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SKIIP 03NEC066V3 25232410 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; single-phase diode bridge; screw Application: for UPS; frequency changer; Inverter; photovoltaics Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 30A Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: IGBT Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge Case: MiniSKiiP® 0 |
товар відсутній |